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Group standard drafting meeting of AMB aluminum nitride ceramic copper clad substrate for insulated gate bipolar transistor (IGBT) module

On June 15, 2018, the seminar on the technical standards of AlN ceramic substrate for IGBT module packaging was successfully held in Wuxi Buckingham grand hotel. The conference was sponsored by China IGBT technology innovation and Industry Alliance and Wuxi Tianyang Electronics Co., Ltd., and was from national power electronic standards committee, Standardization Research Institute of Ministry of industry and information technology, CRRC times Electric Co., Ltd., CRRC Yongji Electric Semiconductor branch, power semiconductor Institute of global energy interconnection Research Institute, Jiangsu Hongwei Technology Co., Ltd., Shanghai Shenhe thermomagnetoelectric More than 20 people from subsidiaries, Zhejiang Dehui Electronic Ceramics Co., Ltd., Xi'an Weiguang Technology Co., Ltd., Jiangsu Zhongke JunXin Technology Co., Ltd. and other units attended the meeting.
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