Aluminum nitride ceramic copper clad substrate
Technical Parameters
|
|
Project |
Performance parameter |
Unit |
|
Whiteboard |
Maximum size |
190×138 |
mm |
|
Thermal expansion coefficient |
4.5 |
10-6/K |
|
|
Bending strength |
400 |
MPa |
|
|
Thickness |
0.38/0.635/1.0 |
mm |
|
|
Circuit pattern |
Conductor tolerance |
±0.3 |
mm |
|
Minimum conductor width |
0.7 |
mm |
|
|
Minimum conductor spacing |
0.7 |
mm |
|
|
Si3N4 ceramic copper clad substrate |
Thermal Conductivity |
180 |
W/m•K |
|
Copper thickness |
≤0.8 |
mm |
|
|
Surface roughness |
Ra≤0.8 |
um |
|
|
Warpage |
≤0.05 |
mm/25mm |
|
|
Dielectric constant（1MHz） |
8.5 |
|
|
|
Dielectric loss（1MHz） |
9 |
10-4 |
|
|
Welding rate |
＞95 |
% |
|
|
Peel strength |
≥150 |
N/cm |
|
|
Breakdown (insulation) strength |
＞20 |
kV/mm |
|
|
Insulation resistance |
＞1014 |
Ω·cm |
|
|
Insulation resistance |
≥4.9 |
N |
|
|
Moisture resistance |
Under the conditions of 500 hours, 85°C and 85%RH, there is no change in electrical properties |
|
|
|
High and low temperature impact |
150℃/-45℃, heat preservation for high and low temperature for each cycle for 0.5 h, and the conversion time is 15 s. After 500 cycles, there is no deterioration of insulation characteristics |
|
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