Copper-clad silicon nitride ceramic substrate
- Commodity name： Copper-clad silicon nitride ceramic substrate
- Description
-
Project
Performance Parameters
Unit
Whiteboard
Maximum Dimensions
190×138
mm
Coefficient of Thermal Expansion
3
10 -6 /K
Flexural Strength
600
MPa
Thickness
0.25/0.32/0.635/1.0
mm
Circuit Pattern
Conductor Tolerance
±0.3
mm
Minimum Conductor Width
0.7
mm
Minimum Conductor Spacing
0.7
mm
Si3N4 Ceramic Copper-Clad Laminate
Thermal Conductivity
90
W/m•K
Copper Thickness
≤0.8
mm
Surface Roughness
Ra≤0.8
um
Warping
≤0.05
mm/25mm
Dielectric Constant (1MHz)
9
Dissipation Factor (1MHz)
23
10-4
Soldering Wettability
＞95
%
Peel Strength
≥120
N/cm
Breakdown (Insulation) Strength
＞15
kV/mm
Insulation Resistance
＞1014
Ω·cm
Wire Bonding Strength
≥4.9
N
Moisture Resistance
No change in electrical properties after 500 hours at 85℃ and 85%RH.
High and Low Temperature Shock
150℃/-45℃, each cycle with 0.5h high and low temperature insulation, transition time 15s. After 5000 cycles, there is no degradation of insulation characteristics.
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