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Silicon nitride ceramic copper clad substrate

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Product description
Parameters

Technical Parameters

 

Project

Performance parameter

Unit

Whiteboard

Maximum size

190×138

mm

Thermal expansion coefficient

3

10-6/K

Bending strength

600

MPa

Thickness

0.25/0.32/0.635/1.0

mm

Circuit pattern

Conductor tolerance

±0.3

mm

Minimum conductor width

0.7

mm

Minimum conductor spacing

0.7

mm

Si3N4 ceramic copper clad substrate

Thermal Conductivity

90

W/m•K

Copper thickness

≤0.8

mm

Surface roughness

Ra≤0.8

um

Warpage

≤0.05

mm/25mm

Dielectric constant(1MHz)

9

 

Dielectric loss(1MHz)

23

10-4

Welding rate

>95

%

Peel strength

≥120

N/cm

Breakdown (insulation) strength

>15

kV/mm

Insulation resistance

>1014

Ω·cm

Insulation resistance

≥4.9

N

Moisture resistance

Under the conditions of 500 hours, 85°C and 85%RH, there is no change in electrical properties

 

High and low temperature impact

150℃/-45℃, heat preservation for high and low temperature for each cycle for 0.5 h, and the conversion time is 15 s. After 5000 cycles, there is no deterioration of insulation characteristics

 

 

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