Silicon nitride substrate
- Commodity name： Silicon nitride substrate
- Description
-
Technical Parameters
Project
Performance Parameters
Unit
Whiteboard
Maximum External Dimensions
190×138
mm
Coefficient of Thermal Expansion
3
10 -6 /K
Flexural Strength
600
MPa
Thickness
0.25/0.32/0.635
mm
Circuit Pattern
Conductor Tolerance
±0.3
mm
Minimum Conductor Width
0.7
mm
Minimum Conductor Spacing
0.7
mm
Si 3 N 4 Ceramic Copper-Clad Laminate
Thermal Conductivity
90
W/m•K
Copper Thickness
≤0.8
mm
Surface Roughness
Ra≤0.8
um
Warping
≤0.05
mm/25mm
Dielectric Constant (1MHz)
9
Dielectric Loss (1MHz)
23
10 -4
Soldering Wettability
＞95
%
Peel Strength
≥120
N/cm
Breakdown (Insulation) Strength
＞15
kV/mm
Insulation Resistance
＞10 14
Ω·cm
Wire Bonding Strength
≥4.9
N
Moisture Resistance
No change in electrical performance after 500 hours at 85℃ and 85%RH.
High and Low Temperature Shock
150℃/-45℃, each high and low temperature cycle is maintained for 0.5 h, and the conversion time is 15 s. After 1000 cycles, there is no degradation of insulation characteristics.
Message
Please provide the following valid information, and we will contact you as soon as possible.
Quick Navigation
Copyright © 2025 Wuxi Tianyang Electronics Co., Ltd
